IGBT Power Module MG15G1AL3- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

Quick Detail:

TOSHIBA GTR Module Silicon N Channel IGBT

Description:

High Power Switching Applications

Motor Control Applications

Applications:

[1]The electrodes are isolated from case.

[1]High input impedance

[1]Includes a complete half bridge in one package.

[1]Enhancement-mode

[1]High speed : tf = 0.30 µs (max) (IC = 150 A)

trr = 0.15 µs (max) (IF = 150 A)

[1]Low saturation voltage

: VCE (sat) = 2.70 V (max) (IC = 150 A)

Specifications:

Competitive Advantage:

Warranty :180days for all goods

Free shipping:Order over $600 win a free shipment fee:goods weight below 3Kg.

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high power igbt

analog integrated circuit

IGBT Power Module MG15G1AL3- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT Images